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May 1994 NDP510A / NDP510AE / NDP510B / NDP510BE NDB510A / NDB510AE / NDB510B / NDB510BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 15 and 13A, 100V. RDS(ON) = 0.12 and 0.15. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. _____________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C TJ,TSTG TL TC = 25C unless otherwise noted NDP510A NDP510AE NDB510A NDB510AE 100 100 20 40 15 60 75 0.5 NDP510B NDP510BE NDB510B NDB510BE Units V V V V 13 52 A A W W/C C C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds -65 to 175 275 (c) 1997 Fairchild Semiconductor Corporation NDP510.SAM Electrical Characteristics (T Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy C = 25C unless otherwise noted) Conditions VDD = 25 V, ID = 15 A Type NDP510AE NDP510BE NDB510AE NDB510BE Min Typ Max 65 15 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS (Note 1) Maximum Drain-Source Avalanche Current OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 7.5 A ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP510A NDP510AE NDB510A TJ = 125C NDB510AE NDP510B NDP510BE NDB510B TJ = 125C NDB510BE NDP510A NDP510AE NDB510A NDB510AE NDP510B NDP510BE NDB510B NDB510BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 7.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 15 2 1.4 3 2.3 0.088 0.16 100 250 1 100 -100 4 3.6 0.12 0.24 0.15 0.3 V A mA nA nA V V A ON CHARACTERISTICS (Note 2) VGS = 10 V, ID = 6.5 A ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 13 A 6 8.6 740 160 40 900 180 50 S pF pF pF Ciss Coss Crss NDP510.SAM Electrical Characteristics (T Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge C = 25C unless otherwise noted) Conditions VDD = 50 V, ID = 15 A, VGS = 10 V, RGEN = 24 Type ALL ALL ALL ALL Min Typ 10 63 49 45 22.5 4.5 10.5 Max 20 100 80 75 30 Units nS nS nS nS nC nC nC SWITCHING CHARACTERISTICS (Note 2) VDS = 80 V, ID = 15 A, VGS = 10V ALL ALL ALL NDP510A NDP510AE NDB510A NDB510AE NDP510B NDP510BE NDB510B NDB510BE DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 15 A 13 A ISM Maximum Pulsed Drain-Source Diode Forward Current NDP510A NDP510AE NDB510A NDB510AE NDP510B NDP510BE NDB510B NDB510BE 60 A 52 A VSD (Note 2) Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IS = 7.5 A VGS = 0 V, IS = 15 A, dIS/dt = 100 A/s ALL TJ = 125C ALL ALL 0.89 0.85 98 6.8 1.3 1.2 140 10 V V ns A trr Irr RJC RJA THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 2 62.5 C/W C/W Notes: 1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP510.SAM Typical Electrical Characteristics 40 2 V GS = 20V I D , DRAIN-SOURCE CURRENT (A) 12 DRAIN-SOURCE ON-RESISTANCE 10 8.0 R DS(on) , NORMALIZED V GS = 5V 6.0 7.0 30 7.0 20 1.6 8.0 10 12 20 6.0 10 1.2 5.0 0 0 2 4 6 VDS , DRAIN-SOURCE VOLTAGE (V) 8 0.8 0 10 20 I D , DRAIN CURRENT (A) 30 40 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.5 2.5 I D = 7.5A V DRAIN-SOURCE ON-RESISTANCE = 10V GS DRAIN-SOURCE ON-RESISTANCE V GS = 10V 2 R DS(on), NORMALIZED 2 TJ = 125C R DS(ON), NORMALIZED 1.5 25C 1 -55C 0.5 1.5 1 0.5 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (C) 150 175 0 0 5 10 15 20 25 30 I D , DRAIN CURRENT (A) 35 40 45 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 25 1.2 V DS = 10V 20 I , DRAIN CURRENT (A) J GATE-SOURCE THRESHOLD VOLTAGE (V) T = -55C 25 125 V DS = V 1.1 GS I D = 250A Vth , NORMALIZED 1 15 0.9 10 0.8 D 5 0.7 0 2 3 4 5 6 7 8 VGS , GATE TO SOURCE VOLTAGE (V) 0.6 -50 -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP510.SAM Typical Electrical Characteristics (continued) 1.06 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) I D = 250A 1.04 15 10 I , REVERSE DRAIN CURRENT (A) 5 VGS = 0V TJ = 125C BV DSS , NORMALIZED 1.02 1 25C -55C 1 0.1 0.98 0.96 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (C) 150 175 S 0.01 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 20 V GS , GATE-SOURCE VOLTAGE (V) 1600 1000 C iss I D = 15A 15 V DS = 20V 50 80 CAPACITANCE (pF) 500 C oss 200 10 100 f = 1 MHz V GS = 0 V 30 0.1 0.2 5 C rss 0 0.5 1 2 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 0 10 20 Q g , GATE CHARGE (nC) 30 40 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP510.SAM Typical Electrical Characteristics (continued) 15 , TRANSCONDUCTANCE (SIEMENS) V DS = 10V 12 T J = -55C 25C VGS = 10V L tp + VDD - 9 125C 6 t p is adjusted to reach the desired peak inductive current, I L . tp IL BV DSS 3 FS VDD g 0 0 4 8 12 ID , DRAIN CURRENT (A) 16 20 Figure 13. Transconductance Variation with Drain Current and Temperature. 100 50 Figure 14. Unclamped Inductive Load Circuit and Waveforms. R I D, DRAIN CURRENT (A) 20 10 5 ( DS ON im )L it 10 10 1m 10 ms 0 s s s V GS = 20V 2 1 0.5 1 2 3 V DS DC SINGLE PULSE T C = 25C 5 10 20 50 , DRAIN-SOURCE VOLTAGE (V) 100 150 Figure 15. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 R JC (t) = r(t) * RJC R = 2.0 C/W JC 0.1 0.05 P(pk) 0.05 0.03 0.02 0.02 0.01 Single Pulse t1 t2 TJ - T C = P * R JC (t) Duty Cycle, D = t1 /t2 0.1 1 t 1 ,TIME (ms) 10 100 1000 0.01 0.01 Figure 16. Transient Thermal Response Curve. NDP510.SAM |
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